2SA562 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

Product specification
TO-92 Plastic-Encapsulate Transistors
2SA562 TRANSISTOR (PNP)
FEATURES
Excellent h_FE Linearlity
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_j
Junction Temperature
T_stg
Storage Temperature
Value
-35
-30
-5
-500
500
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min
V(BR)_CBO I_C= -100μA , I_E=0
-35
V(BR)_CEO I_C= -1mA , I_B=0
-30
V(BR)_EBO I_E= -100μA, I_C=0
-5
I_CBO
V_CB=-35V, I_E=0
I_EBO
V_EB= -5V, I_C=0
h_FE
V_CE=-1V, I_C=-100mA
70
V_CE(sat)
I_C= -100mA, I_B= -10mA
V_BE
V_CE=-1V,I_C=-100mA
f_T
V_CE= -6V, I_C= -20mA
C_ob
V_CB=-6V,I_E=0,f=1MHz
Typ
200
13
Unit
V
V
V
mA
mW
℃
℃
Max
-0.1
-0.1
240
-0.25
-1
Unit
V
V
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
O
70-140
Y
120-240
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