2SA2058 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type

SMD Type
Product specification
2SA2058
Features
High DC current gain: hFE = 200 to 500 (IC = ?0.2 A)
Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-20
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-7
V
Collector current (DC)
IC
-1.5
A
Collector current (Pulse)
Icp
-2.5
A
Base current
IB
-150
mA
Collector power dissipation DC
PC
500
mW
Collector power dissipation t=10s *
PC
750
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:645 mm²)
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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