2SA2018 Datasheet, PDF (1/1 Pages) Rohm – Low frequency transistor

SMD Type
Product specification
2SA2018
Features
A collector current is large
Collector saturation voltage is low. VCE(sat) 250mA
at IC=200mA/IB=10mA
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
ICP *
PC
Tj
Tstg
Rating
15
12
500
1
150
150
-55 to +150
Unit
V
V
mA
A
mW
* Single pulse, Pw=1ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC=10 A
VCEO IC=1mA
VEBO IE=10 A
ICBO VCB=15V
hFE VCE=2V, IC=10mA
VCE(sat) IC/IB=200mA/10mA
Cob VCB=10V, IE=0A, f=1MHz
fT VCE=2V, IE=10mA, f=100MHz
Min Typ Max Unit
15
V
12
V
6
V
100 nA
270
680
100 250 mV
6.5
pF
260
MHz
Marking
Marking
BW
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