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2SA1980UF Datasheet, PDF (1/1 Pages) AUK corp – PNP Silicon Transistor (General small signal amplifier)
SMD Type
Product specification
2SA1980UF
Features
Low collector saturation voltage.
Low output capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-150
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise figure
Symbol
Testconditons
Min Typ Max Unit
BVCBO IC=-100ìA, IE=0
-50
V
BVCEO IC=-1mA, IB=0
-50
V
BVEBO IE=-10ìA, IC=0
-5
V
ICBO VCB=-50V, IE=0
-0.1 ìA
IEBO VEB=-5V, IC=0
-0.1 ìA
hFE VCE=-6V, IC=-2mA
70
700
VCE(sat) IC=-100mA, IB=-10mA
-0.3 V
fT VCE=-10V, IC=-1mA
80
MHz
Cob VCB=-10V, IE=0, f=1MHz
4
7 pF
NF VCE=-6V,IC=-0.1mA,f=1KHz,Rg=10KÙ
10 dB
hFE Classification
Marking
Rank
hFE
O
70 140
Y
120 240
C
G
200 400
L
300 700
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