2SA1980 Datasheet, PDF (1/1 Pages) AUK corp – PNP Silicon Transistor (General small signal amplifier)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SA1980 TRANSISTOR (PNP)
FEATURES
z Low Collector Saturation Voltage: V_CE(sat) =-0.3V(Max.)
z Low Output Capacitance : C_ob =4pF (Typ.)
z Complementary Pair with 2SC5343
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_j
Junction Temperature
T_stg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Value
-50
-50
-5
-150
625
150
-55-150
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=-100μA,I_E=0
-50
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-50
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10μA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-50V,I_E=0
Collector cut-off current
I_CEO
V_EB=-5V,I_C=0
DC current gain
h_FE
V_CE=-6V,I_C=-2mA
70
Collector-emitter saturation voltage
V_CE(sat) I_C=-100mA,I_B=-10mA
Transition frequency
f_T
V_CE=-10V,I_C=-1mA
80
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
Noise figure
NF
V_CE=-6V,I_C=-0.1mA,f=1KH_Z,R_S=10KΩ
Unit
V
V
V
mA
mW
℃
℃
Typ Max Unit
V
V
V
-0.1 μA
-0.1 μA
700
-0.3
V
MHz
4
7
pF
10
dB
CLASSIFICATION OF h_FE
Rank
Range
O
70-140
Y
120-240
G
200-400
L
300-700
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