2SA1971 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

SMD Type
Features
High voltage: VCE = -400 V
Transistors
Product specification
2SA1971
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-400
V
Collector-emitter voltage
VCEO
-400
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-0.5
A
Collector current(pulse)
ICP
-1
A
Base current
IB
-0.25
A
Collector power dissipation
500
PC
mW
1000 *
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm² X 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB =-400V, IE=0
IEBO VEB=-7V,IC=0
V(BR)CEO IC=-10mA, IB=0
VCE=-5V,IC=-20mA
hFE
VCE=-5V,IC=-100mA
VCE (sat) IC=-100mA,IB=-10mA
VBE (sat) IC=-100mA,IB=-10mA
fT VCE=-5V,IC=-50mA
Cob VCB=-10V,IE=0,f=1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Min Typ Max
-10
-1
-400
140
450
140
400
-0.4 -1
-0.76 -0.9
35
18
Unit
ìA
ìA
V
V
V
MHz
pF
0.2
ìs
2.3
ìs
0.2
ìs
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