2SA1947 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

SMD Type
Features
High fT: fT=100MHz typ
Excellent linearity of DC forward current gain
High collector current Icm=-1.5A
Small package for mounting
IC
Product specification
2SA1947
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VEBO
-4
V
VCEO
-25
V
ICM
-1.5
A
IC
-1
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC=-10ìA,IE=0
V(BR)EBO IE=-10ìA,IC=0
V(BR)CEO IC=-100ìA,RBE=
ICBO VCB=-25V,IE=0
IEBO VEB=-2V,IC=0
hFE VCE=-1V,IC=-500mA
VCE(sat) IC=-500mA,IB=-25mA
fT VCE=-6V,IE=-10mA
hFE Classification
Marking
hFE
ABC
55 110
ABD
90 180
ABE
150 300
Min Typ Max Unit
-30
V
-4
V
-25
V
-1 ìA
-1 ìA
55
300
-0.5 V
100
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1