2SA1946 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

SMD Type
IC
Product specification
2SA1946
Features
Low collector saturation voltage
VCE(sat)=-0.25V typ
High fT: fT=180MHz typ
Excellent linearity of DC forward current gain
High collector current Icm=-1A
Small package for mounting
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-25
V
VEBO
-4
V
VCEO
-20
V
ICM
-1
A
IC
-700
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC=-10ìA,IE=0
V(BR)EBO IE=-10ìA,IC=0
V(BR)CEO IC=-100ìA,RBE=
ICBO VCB=-25V,IE=0
IEBO VEB=-2V,IC=0
hFE VCE=-4V,IC=-100mA
VCE(sat) IC=-500mA,IB=-25mA
fT VCE=-6V,IE=-10mA
hFE Classification
Marking
hFE
AAE
150 300
AAF
250 500
AAG
400 800
Min Typ Max Unit
-25
V
-4
V
-20
V
-1 ìA
-1 ìA
150
800
-0.25 -0.5 V
180
MHz
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