2SA1944 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE

SMD Type
Features
High voltage VCEO=-50V
Low collector to emitter saturation voltage
VCE(sat)=-0.2v typ (@IC=-500mA, IB=-10mA)
High hFE: hFE=400 to 800
Small package for mounting
IC
Product specification
2SA1944
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VEBO
-6
V
VCEO
-50
V
ICM
-2
A
IC
-1
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC=-10ìA,IE=0
V(BR)EBO IE=-10ìA,IC=0
V(BR)CEO IC=-1mA,RBE=
ICBO VCB=-40V,IE=0
IEBO VEB=-2V,IC=0
hFE VCE=-6V,IC=-100mA
VCE(sat) IC=-500mA,IB=-10mA
fT VCE=-10V,IE=-10mA
Cob VCB=-10V,IE=0,f=1MHz
Marking
Marking
XG
Min Typ Max Unit
-50
V
-6
V
-50
V
-0.1 ìA
-0.1 ìA
400
800
-0.2 -0.5 V
90
MHz
30
pF
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