2SA1923 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

SMD Type
Transistors
Product specification
2SA1923
Features
High Voltage:VCBO=-400V
Low Saturation Voltage:VCE(sat)=-1V(Max.)
IC=-100mA,IB=-10mA
Absolute Maximum Ratings Ta = 25
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Tc=25
Junction Temperature
Storage Temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-400
V
VCEO
-400
V
VEBO
-7
V
IC
-0.5
A
ICP
-1
A
IB
-0.25
A
1
W
PC
10
W
Tj
150
Tstg
-55 to 150
1 Base
2 Collector
3 Emitter
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