2SA1875 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Definition CRT Display Video Output Applications

SMD Type
IC
Product specification
2SA1875
Features
High fT : fT=400MHz(typ).
High breakdown voltage : VCEO 200V(min).
Large current capacitance.
Adoption of FBET process.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Tc=25
Junction Temperature
Storage Temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Symbol
Rating
Unit
VCBO
-200
V
VCEO
-200
V
VEBO
-3
V
IC
-300
mA
ICP
-600
mA
IB
-30
mA
0.8
W
PC
12
W
Tj
150
Tstg
-55 to 150
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