2SA1837 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Product specification
TO-220F Plastic-Encapsulate Transistors
2SA1837 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z High Transition Frequency
APPLICATIONS
z Power Amplifier Applications
z Driver Stage Amplifier Applications
TO – 220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-230
-230
-5
-1
1.5
83
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V_(BR)CBO
Collector-emitter breakdown voltage
V_(BR)CEO
Emitter-base breakdown voltage
V_(BR)EBO
Collector cut-off current
I_CBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE*
V_CE(sat)*
Base-emitter voltage
V_BE
Transition frequency
f_T
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
I_C=-100µA,I_E=0
I_C=-1mA,I_B=0
I_E=-100µA,I_C=0
V_CB=-230V,I_E=0
V_EB=-5V,I_C=0
V_CE=-5V, I_C=-0.1A
I_C=-0.5A,I_B=-50mA
V_CE=-5V, I_C=-500mA
VCE=-10V,IC=-0.1A
Min Typ Max Unit
-230
V
-230
V
-5
V
-1
μA
-1
μA
100
320
1.5
V
-1
V
70
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1