2SA1832 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Product specification
2SA1832
Features
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.)
Excellent hFE Linearity :
hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.)
High hFE: hFE=70 to 400
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-150
mA
IB
-30
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Collector Output Capacitance
Transition frequency
Symbol
Testconditons
IcBO VCB = -5V , IE = 0
IEBO VEB = -5V , IC = 0
hFE VCE = -6V , IC = -2mA
VCE(sat) IC = -100mA , IB = -10mA
Cob VCB=-10V,IE=0,f=1MHz
fT VCE=-10V,IC=-1mA
Min Typ Max Unit
-0.1
A
-0.1
A
70
400
-0.1 -0.3 V
4
7 pF
80
MHz
hFE Classification
Marking
Rank
hFE
SQ
Q
70 140
SY
Y
120 240
SG
GR
200 400
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