2SA1669 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Frequency Amp Applications

Product specification
2SA1669
Features
High cutoff frequency : fT=3.0GHz typ.
High power gain : MAG=11dB typ (f=0.9GHz)
Small noise figure: NF=2.0dB typ (f=0.9GHz)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-15
V
VEBO
-3
V
IC
-50
mA
PC
250
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output Capacitance
Reverse transfer capacitance
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
Symbol
Testconditons
IcBO VCB = -15V , IE = 0
IEBO VEB = -2V , IC = 0
hFE VCE = -10V , IC = -5mA
fT VCE = -10V , IC = -5mA
Cob VCB = -10V , f = 1MHz
Cre VCB = -10V , f = 1MHz
|S21e|² VCE=-10V,IC=-5mA,f=0.9GHz
MAG VCE=-10V,IC=-5mA,f=0.9GHz
NF VCE=-10V,IC=-3mA,f=0.9GHz
Marking
Marking
DB
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
15
1.5 3.0
MHz
1.0 1.5 pF
0.7
pF
5.0
dB
11
dB
2.0
dB
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