2SA1662 Datasheet, PDF (1/1 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP)

Product specification
SOT-89-3L Plastic-Encapsulate Transistors
2SA1662 TRANSISTOR (PNP)
FEATURES
Complementary to KTC4374
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-0.4
0.5
150
-55-150
Unit
V
V
V
A
W
℃
℃
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-1mA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-10mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1mA,I_C=0
Collector cut-off current
I_CBO
V_CB=-80V,I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_EB=-5V,I_C=0
V_CE=-2V,I_C=-50mA
V_CE=-2V,I_C=-200mA
I_C=-200mA,I_B=-20mA
Base-emitter voltage
V_BE
V_CE=-2V,I_C=-5mA
Transition frequency
f_T
V_CE=-10V,I_C=-10mA
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
Min Typ Max Unit
-80
V
-80
V
-5
V
-0.1 μA
-0.1 μA
70
240
40
-0.4
V
-0.55
-0.8
V
120
MHz
14
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
70-140
FO
Y
120-240
FY
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