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| 2SA1627 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) | |||
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Product specification
TO-126C Plastic-Encapsulate Transistors
2SA1627 TRANSISTOR (PNP)
TO â 126C
FEATURES
z High Voltage
z High Speed Switching
z Low Collector Saturation Voltage
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-600
-600
-7
-1
1.25
100
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE(sat)*
Collector output capacitance
Cob
Transition frequency
fT
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
T est conditions
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-100µA,IC=0
VCB=-600V,IE=0
VEB=-7V,IC=0
VCE=-5V, IC=-0.1A
VCE=-5V, IC=-0.5A
IC=-0.3A,IB=-0.06A
IC=-0.3A,IB=-0.06A
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-0.1A
Min Typ Max Unit
-600
V
-600
V
-7
V
-10 μA
-10 μA
30
120
5
-0.5 V
-1.2 V
50 pF
10
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
M
30-60
L
40-80
K
60-120
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