2SA1625 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SA1625 TRANSISTOR (PNP)
FEATURES
z High Voltage
z High Speed Switching
z Low Collector Saturation Voltage
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-400
-400
-7
-500
750
166
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C= -0.1mA,I_E=0
-400
V
V_(BR)CEO I_C=-1mA,I_B=0
-400
V
V_(BR)EBO I_E=-0.1mA,I_C=0
-7
V
I_CBO
V_CB=-400V,I_E=0
-10
μA
I_EBO
V_EB=-5V,I_C=0
-10
μA
h_FE
V_CE=-5V, I_C=-50mA
40
200
V_CE(sat) I_C=-100mA,I_B=-10mA
-0.5
V
V_{BE (sat)} I_C=-100mA,I_B=-10mA
-1.2
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
20
pF
f_T
VCE=-10V,IC=-10mA
20
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
M
40-80
L
60-120
K
100-200
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