2SA1612 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

Product specification
2SA1612
Features
High DC current gain
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-50
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Base-emitter voltage
Gain bandwidth product
Output capacitance
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
C15
135 270
C16
200 400
Symbol
Testconditons
ICBO VCB = -120V, IE=0
IEBO VEB = -5V, IC=0
VCE = -6V , IC = -1mA
hFE
VCE = -6V , IC = -0.1mA *
VCE(sat) IC = -10mA , IB = -1mA
VBE VCE = -6V , IC = -1mA
fT VCE = -6V , IE = -1mA
Cob VCB = -30V , IE = 0 , f = 1.0MHz
C17
300 600
C18
450 900
Min Typ Max Unit
-50 nA
-50 nA
135 500 900
100 500
-0.09 -0.3 V
-0.55 -0.61 -0.65 V
50 90
MHz
2
3 pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1