2SA1611 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

Product specification
2SA1611
Features
High DC Current Gain.
High Voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5
V
IC
-100
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage
Base-emitter voltage
Gain bandwidth product
Output capacitance
* Pulse test: tp 300 ìs; d 0.02.
hFE Classification
Marking
hFE
M4
90 180
M5
135 270
Symbol
Testconditons
ICBO VCB = -60V, IE=0
IEBO VEB = -5V, IC=0
hFE VCE = -6V , IC = -1mA
VCE(sat) IC = -100mA , IB = -10mA
VBE VCE = -6V , IC = 1mA
fT VCE = -6V , IE = 10mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
M6
200 400
M7
300 600
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
90 200 600
-0.18 -0.3 V
-0.58 -0.62 -0.68 V
180
MHz
4.5
pF
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