2SA1608 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR

Product specification
2SA1608
Features
High fT: fT=400MHz.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-40
V
VEBO
-5
V
IC
-500
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
Y12
75 150
Y13
100 200
Symbol
Testconditons
ICBO VCB = -40V, IE=0
IEBO VEB = -4V, IC=0
hFE VCE = -2V , IC = -150mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
fT VCE = -10V , IE = 20mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton VCC = -30V ,
tstg IC = 150mA ,
toff IB1 = -IB2 = 15mA
Y14
150 300
Min Typ Max Unit
-100 nA
-100 nA
75 140 300
-0.45 -0.75 V
-1 -1.3 V
150 400
MHz
5
8 pF
25
ns
70
ns
100
ns
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