2SA1586 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

SMD Type
Transistors
Product specification
2SA1586
Features
High voltage and high current.
Excellent hFE linearity.
High hFE.
Low noise.
Small package.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-150
mA
IB
-30
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE VCE=-6V, IC=-2mA
VCE (sat) IC=-100mA, IB=-10mA
fT VCE=-10V, IC=-1mA
Cob VCB=-10V, IE=0, f=1MHz
NF VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10kÙ
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
70
400
-0.1 -0.3 V
80
MHz
4
7 pF
1.0 10 dB
hFE Classification
Marking
hFE
SO
70 140
SY
120 240
SG
200 400
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