2SA1585S Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Product specification
TO-92S Plastic-Encapsulate Transistors
2SA1585S TRANSISTOR (PNP)
FEATURES
z Low V_CE(sat).
z Excellent DC current gain characteristics.
z Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
Symbol
Parameter
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C Collector Power Dissipation
T_j
Junction Temperature
T_stg Storage Temperature Range
Value
-20
-20
-6
-2
400
150
-55-150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CEsat
f_T
I_C= -50μA , I_E=0
I_C= -1mA , I_B=0
I_E=- 50μA, I_C=0
V_CB=-20V , I_E=0
V_EB= -5V , I_C=0
V_CE=-2V, I_C= -0.1A
I_C= -2A, I_B=-0.1A
V_CE=-2V, I_C=-0.5A
F=100MHz
-20
V
-20
V
-6
V
-0.1
μA
-0.1
μA
120
560
-0.5
V
240
MHz
CLASSIFICATION OF h_FE
Rank
Range
Q
120-170
R
180-390
s
270-560
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