2SA1579 Datasheet, PDF (1/1 Pages) Rohm – High-voltage Amplifier Transistor (-120V, -50mA)

SMD Type
Transistors
Product specification
2SA1579
Features
High breakdown voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-50
mA
PC
0.2
W
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
hFE Classification
Marking
Rank
hFE
RR
R
180 390
RS
S
270 560
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-100V
IEBO VEB=-4V
VCE(sat) IC=-10mA, IB=-1mA
hFE VCE=-6V, IC=-2mA
fT VCE=-12V, IE= 2mA, f=100MHz
Cob VCB=-12V, IE=0A, f=1MHz
Min Typ Max Unit
-120
V
-120
V
-5
V
-0.5 ìA
-0.5 ìA
-0.5 V
180
560
140
MHz
3.2
pF
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