2SA1566 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Product specification
2SA1566
Features
Low frequency amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -70 V, IE = 0
IEBO VEB = -2 V, IC = 0
hFE VCE = -12 V,IC = -2 mA
VCE(sat) IC = -10 mA,IB = -1 mA
VBE(sat) IC = -10 mA,IB = -1 mA
hFE Classification
Marking
Rank
hFE
JID
D
250 500
JIE
E
400 800
Min Typ Max Unit
-120
V
-120
V
-5
V
-0.1 ìA
-0.1 ìA
250
800
-0.15 V
1.2 V
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