2SA1532 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Product specification
2SA1532
Features
High transition frequency fT.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-5
V
IC
-30
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Base-emitter saturation voltage
Collector-base cutoff current
Collector-emitter cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Reverse transfer impedance
Common-emitter reverse transfer capacitance
Symbol
Testconditons
VBE VCE = -10 ìA, IC = -1 mA
ICBO VCB = -10 V, IE = 0
ICEO VCE = -20 V, IB = 0
IEBO VEB = -5 V, IC = 0
hFE VCB = -10 V, IE = 1 mA
VCE(sat) IC = -10 mA, IB = -1 mA
fT VCB = -10 V, IE = 1 mA, f = 200 MHz
NF VCB = -10 V, IE = 1 mA, f = 5 MHz
Zrb VCB = -10 V, IE = 1 mA, f = 2 MHz
Cre VCB = -10 V, IE = 1 mA, f = 10.7 MHz
Min Typ Max Unit
-0.7
V
-0.1 ìA
-100 ìA
-10 ìA
50
220
-0.1
V
150 300
MHz
2.8 4.0 dB
22 60 Ù
1.2 2.0 pF
hFE Classification
Marking
Rank
hFE
A
50 100
E
B
70 140
C
110 220
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