2SA1463 Datasheet, PDF (1/1 Pages) NEC – HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Features
High speed,high voltage switching.
Low Collector Saturation Voltage
Product specification
2SA1463
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collecto to emitter voltage
Emitter to base voltage
Collector current(DC)
Collector current(Pulse)*
Total power dissipation
Junction temperature
Storage temperature
*.pw 10 ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
* Pulse test: tp 350 ìs; d 0.02.
hFE Classification
Marking
hFE
1L
60 120
1K
100 200
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-45
V
VEBO
-5.0
V
IC
-1.0
A
IC
-2.0
A
PT
20
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICES VCE = -45V, RBE=0
IEBO VEB = -4V, IC=0
hFE1 VCE = -10V , IC = -50mA
hFE2 VCE = -10V , IC = -500mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
fT VCE = -10V , IE = 100mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton
tstg IC = -500mA , IB1 = IB1 = -50mA
toff
Min Typ Max Unit
-0.5 ìA
-0.5 ìA
60
200
60
-0.26 -0.6 V
-0.98 -1.2 V
300 400
MHz
11 25 pF
25 40 ns
46 70 ns
62 100 ns
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