2SA1462 Datasheet, PDF (1/1 Pages) NEC – HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

Product specification
2SA1462
Features
High speed,high voltage switching.
High ft:fT=1800MHz TYP.
Low Cob:Cob=2.0pF TYP.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collecto to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation TA=25
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-15
V
VCEO
-15
V
VEBO
-4.5
V
IC
-50
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Gain bandwidth product
Output capacitance
Turnput Capacitance
Storage Time
Turn-off Time
* Pulse test: tp 350 ìs; Duty Cycle 2%
hFE Classification
Marking
hFE
Y33
50 100
Y34
75 150
Symbol
Testconditons
ICES VCE = -8.0V, RBE=0
IEBO VEB = -3.0V, IC=0
VCE = -1.0V , IC = -10mA
hFE
VCE = -1.0V , IC = -1mA
VCE(sat) IC = -10mA , IB = -1.0mA
VBE(sat) IC = -10mA , IB = -1.0mA
fT VCE = -10V , IE = 10mA
Cob VCB = -5.0V , IE = 0 , f = 1.0MHz
ton
tstg IC = -10mA , IB1 = IB1 = -1.0mA
toff
Min Typ Max Unit
-100 nA
-100 nA
50 80 150
30 70
-0.09 -0.20 V
-0.98 -0.95 V
800 1800
MHz
2.0 3.0 pF
9.0 20 ns
16 40 ns
19 40 ns
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