2SA1415 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Switching, Predriver Applications

SSMMDD TTyyppee
Product specification
2SA1415
Features
Adoption of FBET Process
High Breakdown Voltage (VCEO = 160V)
Excellent Linearlity of hFE and Small Cob
Fast Switching Speed
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-160
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-140
mA
Collector Current (Pulse)
ICP
-200
mA
Collector Power Dissipation
PC
500
mW
PC *
1.3
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic board (250 mm² x 0.8 mm)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = -80V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -5V , IC = -10mA
VCE(sat) IC = -50mA , IB = -5mA
fT VCE = -10V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max Unit
-100 nA
-100 nA
100
400
-0.14 -0.4 V
150
MHz
4
pF
0.1
1.5
ìs
0.1
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