2SA1385-Z Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR MP-3

SMD Type
Transistors
Product specification
2SA1385-Z
Features
Low VCE(sat):VCE(sat)=-0.18 V TYP.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Total power dissipation
Junction temperature
Storage temperature
* PW 10ms, duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Turn-on time
Storage time
Fall time
* PW 350ìs, duty cycle 2%.
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-7
V
IC
-5
A
ICP
-7
A
PT
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
ICBO VCB = -50 V, IE = 0
IEBO VEB = -7 V, IC = 0
hFE VCE = -1 V, IC = -2 A
VCE(sat) IC = -2 A, IB = -0.2 A
VBE(sat) IC = -2 A, IB = -0.2 A
fT VCE = -10 V, IC = -0.5 A
ton
IC = -2 A,IB1 =-IB2 = -0.2 A, RL=50Ù,
tstg _VCC=-10V
tf
Min Typ Max Unit
-10 ìA
-10 ìA
100 200 400
-0.18 -0.3 V
-1.2 V
140
MHz
0.08 1.0 ìs
0.55 2.5 ìs
0.18 1.0 ìs
hFE Classification
Marking
hFE
M
100 200
L
160 320
K
200 400
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