2SA1384 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER , CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

SMD Type
Product specification
2SA1384
Features
High Voltage: VCBO = -300V , VCEO = -300V
Low Saturation Voltage: VCE(sat) = -0.5V (max)
Small Collector Output Capacitance: Cob = 6pF
PC = 1 to 2W (mounted on ceramic substrate)
Small Flat Package
Complementary to 2SC3515
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-8
V
Collector Current
IC
-100
mA
Base Current
IB
-20
mA
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* 2SA1384 mounted on ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -300V , IE = 0
IEBO VEB = -8V , IC = 0
V(BR)CBO IC = -0.1mA , IE = 0
V(BR)CEO IC = -1mA , IB = 0
hFE VCE = -10V , IC = -20mA
VCE(sat) IC = -20mA , IB = -2mA
VBE(sat) IC = -20mA , IB = -2mA
fT VCE = -10V , IC = -20mA
Cob VCB = -20V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
-300
V
-300
V
30
150
-0.5 V
-1.0 V
50 70
MHz
6
8 pF
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