2SA1371 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Definition CRT Display, Video Output Applications

Product specification
TO-92MOD Plastic-Encapsulate Transistor
2SA1371 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z Small Reverse Transition Capacitance and High Frequency
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-300
-300
-5
-0.1
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C= -10µA,I_E=0
-300
V
V_(BR)CEO I_C=-1mA,I_B=0
-300
V
V_(BR)EBO I_E=-10µA,I_C=0
-5
V
I_CBO
V_CB=-200V,I_E=0
-0.1
μA
I_EBO
V_EB=-4V,I_C=0
-0.1
μA
h_FE
V_CE=-10V, I_C=-10mA
40
320
V_CE(sat) I_C=-20mA,I_B=-2mA
-0.6
V
V_{BE (sat)} I_C=-20mA,I_B=-2mA
-1
V
C_ob
V_CB=-30V,I_E=0, f=1MHz
5
pF
f_T
VCE=-30V,IC=-10mA
100
MHz
CLASSIFICATION OF h_FE
RANK
C
RANGE
40-80
D
60-120
E
100-200
F
160-320
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1