2SA1365 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

Product specification
2SA1365
Features
Low collector to emitter saturation voltage.
Excellent linearity nof DC forward current gain.
Super mini package for easy mounting.
High collector current.
High gain band width product.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-20
V
VEBO
-4
V
ICM
-1
A
IC
-700
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain ( * )
Collector-emitter saturation voltage
Gain band width product
* It shows hFE classification in right table.
hFE Classification
Marking
hFE
AE
150 300
AF
250 500
Symbol
Testconditons
V (BR) CBO IC = -10 ìA, IE = 0
V (BR) CEO IC = -100 ìA,RBE =
V (BR) EBO IE = -10 ìA, IC = 0
ICBO VCB = -25 V, IE = 0
IEBO VEB = -2 V, IC = 0
hFE VCE = -4 V, IC = -100 mA
VCE IC = -500 mA, IB = -25 mA
fT VCE = -6 V, IE = 10 mA
AG
400 800
Min Typ Max Unit
-25
V
-20
V
-4
V
-1 ìA
-1 ìA
150
800
-0.2 -0.5 V
180
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
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