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| 2SA1357 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS) | |||
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Product specification
TO-126C Plastic-Encapsulate Transistors
2SA1357 TRANSISTOR (PNP)
TO â 126C
FEATURES
z High Collector Current
z Strobe Flash Applications
z Audio Power Amplifier Applications
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-20
-8
-5
1.5
83
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC= -1mA,IE=0
IC=-10mA,IB=0
IE= -1mA,IC=0
VCB=-35V,IE=0
VEB=-8V,IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
IC=-4A,IB=-0.1A
VCE=-2V, IC=-4A
VCB=-10V,IE=0, f=1MHz
VCE=-2V,IC=-0.5A
Min Typ Max Unit
-35
V
-20
V
-8
V
-100 μA
-100 μA
100
320
70
-1
V
-1.5 V
62
pF
170
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
100-200
Y
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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