2SA1309A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Product specification
TO-92S Plastic-Encapsulate Transistors
2SA1309A TRANSISTOR (PNP)
FEATURES
z High Forward Current Transfer Ratio h_FE.
z Allowing Supply with the Radial Taping.
z Optimum for High-density Mounting.
z Complementary to 2SC3311A
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-7
-100
300
417
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
C_ob
f_T
Test conditions
I_C= -0.01mA,I_E=0
I_C=-2mA,I_B=0
I_E=-0.01mA,I_C=0
V_CB=-10V,I_E=0
V_CE=-10V,I_B=0
V_EB=-6V,I_C=0
V_CE=-10V, I_C=-2mA
I_C=-50mA,I_B=-5mA
V_CB=-10V,I_E=0, f=1MHz
VCE=-10V,IC=-1mA, f=200MHz
Min
Typ Max Unit
-60
V
-50
V
-7
V
-100 nA
-1
μA
-100 nA
160
460
-0.3 V
3.5
pF
80
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
Q
160-260
R
210-340
S
290-460
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1