2SA1300 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SA1300 TRANSISTOR (PNP)
FEATURES
� High DC Current gain and excellent hFE linearity
� Low saturation voltage
TO-92
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-20
-10
-6
-2
0.75
150
-55 to +150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
1. EMlTTER
2. COLLECTOR
3. BASE
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
IC=-1mA , IE=0
IC=-10mA , IB=0
IE=-1mA, IC=0
VCB=-20 V , IE=0
VEB=-6 V , IC=0
VCE=-1V, IC=-0.5A
IC=-2A, IB= -100mA
IC= -2A, VCE=-1V
VCE=-1V, IC= -0.5A f
= 30MHz
Cob
VCB=-10V,IE=0
f=1MHZ
MIN
-20
-10
-6
140
TYP
140
50
MAX
-0.1
-0.1
600
-0.82
-1.5
UNIT
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
Y
140-280
GR
200-400
BL
300-600
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