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| 2SA1296 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SA1296 TRANSISTOR (PNP)
FEATURES
z Low Saturation Voltage: VCE (sat)
z High DC Current Gain
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-20
-6
-2
750
166
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.1mA,IE=0
-20
V
V(BR)CEO IC=-10mA,IB=0
-20
V
V(BR)EBO IE=-0.1mA,IC=0
-6
V
ICBO
VCB=-20V,IE=0
-0.1
μA
IEBO
VEB=-6V,IC=0
-0.1
μA
hFE(1)
VCE=-2V, IC=-0.1A
120
400
hFE(2)
VCE=-2V, IC=-2A
40
VCE(sat) IC=-2A,IB=-0.1A
-0.5
V
VBE
VCE=-2V, IC=-0.1A
-0.85
V
Cob
VCB=-10V,IE=0, f=1MHz
40
pF
fT
VCE=-2V,IC=-0.5A
120
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
Y
120-240
GR
200-400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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