2SA1252 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – For AF Applications

Product specification
2SA1252
Features
High VEBO.
Wide ASO and high durability against breakdown.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-15
V
IC
-150
mA
ICP
-300
mA
PC
200
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
IcBO VCB = -40V , IE = 0
IEBO VEB = -10V , IC = 0
hFE VCE = -6V , IC = -1mA
fT VCE = -6V , IC = -1mA
Cob VCB = -6V , f = 1MHz
VCE(sat) IC = -50mA , IB = -5mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
hFE Classification
Marking
hFE
D4
90 180
D5
135 270
D6
200 400
D7
300 600
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
90
560
100
MHz
3.5
pF
-0.5 V
-60
V
-50
V
-15
V
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4008-318-123
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