2SA1245 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER AND SWITCHING, VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

Product specification
2SA1245
Features
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
-15
V
VCEO
-8
V
VEBO
-2
V
IC
-30
mA
IB
-15
mA
PC
150
Mw
Tj
125
Tstg
-55 to 125
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reserve Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Testconditons
ICBO VCB=-5V;IE=0
IEBO VEB=-1V;IC=0
hFE VCE=-5V;IC=-10mA
Cob
VCB=-5V;IE=0;f=1MHz
Cre
Ft
VCE=-5V;IC=-10mA
|S2le|²(1) ^{VCE=-5V;IC=-10mA;f=500MHz}
|S2le|²(2) VCE=-5V;IC=-10mA;f=1GHz
NF(1) VCE=-5V;IC=-3mA;f=500MHz
NF(2) VCE=-5V;IC=-3mA;f=1GHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
20
0.75
pF
0.60
pF
4
GHz
14
dB
9.5
dB
2.5
dB
3.0
dB
Marking
Marking
MD
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1