2SA1235 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

Product specification
2SA1235
Features
Small collector to emitter saturation voltage.
Excelent lineary DC forward current gain.
Super mini package for easy mounting.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-6
V
IC
-200
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Current gain bandwidth product
Collector output capacitance
Noise figure
Symbol
Testconditons
Min Typ Max Unit
V(BR)CEO IC = -100ìA , RBE =
-50
V
ICBO ICB = -50V , IE = 0
-0.1 ìA
IEBO VEB = -6V , IC = 0
-0.1 ìA
hFE VCE = -6V , IC = -1mA
150
800
VCE(sat) IC = -100mA , IB = -10mA
-0.3 V
fT VCE = -6V , IE = 10mA
200
MHz
Cob VCB = -6V , IE = 0 , f = 1MHz
4.0
pF
NF
VCB = -6V , IE = 0.3mA , f = 100Hz , RG
= 10KÙ
20 dB
hFE Classification
Marking
hFE
ME
150 300
MF
250 500
MG
400 800
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[e-mail]
4008-318-123
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