2SA1213 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Product specification
2SA1213
Features
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)
High Speed Switching Time: tstg = 1.0ìs(typ.)
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2873
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Base Current
IB
-0.4
A
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = -50V , IE = 0
IEBO VEB = -5V , IC = 0
V(BR)CEO IC = -10mA , IB = 0
VCE = -2V , IC = -0.5A
hFE
VCE = -2V , IC = -2.0A
VCE(sat) IC = -1A , IB = -0.05A
VBE(sat) IC = -1A , IB = -0.05A
fT VCE = -2V , IC = -0.5A
Cob VCB = -10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
-50
V
70
240
20
-0.5 V
-1.2 V
120
MHz
40
pF
0.1
1.0
ìs
0.1
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