2SA1202 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, VOLTAGE AMPLIFIER APPLICATIONS)

SMD Type
Product specification
2SA1202
Features
Suitable for Driver of 30 to 35 Watts Audio Amplifier
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2882
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-400
mA
Base Current
IB
-80
mA
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -80V , IE = 0
IEBO VEB = -5V , IC = 0
V(BR)CEO IC = -10mA , IB = 0
hFE IE = -2mA , IC = -50mA
VCE(sat) IC = -200mA , IB = -20mA
VBE VCE = -2V , IC = -5mA
fT VCE = -10V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
-80
V
70
240
-0.4 V
-0.55
-0.8 V
120
MHz
14
pF
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