2SA1200 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

SMD Type
Product specification
2SA1200
Features
High Voltage : VCEO = -150V
High Transition Frequency : fT = 120MHz(typ.)
Small Flat Package
Complementary to 2SC2880
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCEO
-150
V
VCBO
-150
V
VEBO
-5
V
IC
-50
mA
IB
-10
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transtion Frequency
Collector Output Capacitance
Symbol
Testconditons
IEBO VEB = -5V , IC = 0
ICBO VCB = -150V , IE = 0
hFE VCE = -5V , IC = -10mA
VCE(sat) IC = -10mA , IB = -1mA
VBE VCE = -5V , IC = -30mA
fT VCE = -30V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.1
A
-0.1
A
70
240
-0.8 V
-0.9 V
120
MHz
4.0 5.0 pF
hFE Classification
Marking
Rank
hFE
O
70 140
B
Y
120 240
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