2SA1182 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Product specification
2SA1182
Features
SOT-23 package
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
-35
V
VCEO
-30
V
VEBO
-5
V
IC
-500
mA
IB
-50
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Symbol
Testconditons
ICBO VCB = -35 V, IE = 0
IEBO VEB = -5 V, IC = 0
VCE = -1 V, IC = -100 mA
hFE
VCE = -6 V, IC = -400 mA
VCE (sat) IC = -100 mA, IB = -10 mA
VBE VCE = -1 V, IC = -100 mA
Cob VCB = -6 V, IE = 0, f = 1 MHz
fT VCE = -6 V, IC = -20 mA
Min Typ Max Unit
-0.1
A
-0.1
A
70
240
25
-0.1 -0.25 V
-0.8 -1.0 V
13
pF
200
MHz
hFE Classification
Marking
Rank
hFE
ZO
O
70 140
ZY
Y
120 240
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