2SA1171 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Product specification
2SA1171
Features
Low frequency small signal amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-90
V
VCEO
-90
V
VEBO
-5
V
IC
-50
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CEO IC = -1 mA, RBE =
ICBO VCB = -75 V, IE = 0
hFE VCE = -12 V, IC = -2 mA
VBE VCE = -12 V, IC = -2 mA
VCE(sat) IC = -10 mA, IB = -1 mA
fT VCE = -12 V, IC = -2 mA
Cob VCB = -25 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-90
V
-0.5 ìA
250
800
-0.75 V
-0.5 V
200
MHz
1.6
pF
hFE Classification
Marking
hFE
PD
250 500
PE
400 800
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