2SA1162 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Product specification
2SA1162
Features
High voltage and high current: VCEO = -50 V, IC = ?150 mA (max)
Low noise: NF = 1dB (typ.), 10dB (max)
Small package
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-150
mA
IB
-30
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Symbol
Testconditons
ICBO VCB = -50 V, IE = 0
IEBO VEB = -5 V, IC = 0
hFE VCE = -6 V, IC = -2 mA
VCE (sat) IC = -100 mA, IB = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
NF
Rg = 10 k
fT VCE = -10 V, IC = -1 mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1
A
-0.1
A
70
400
-0.1 -0.3 V
4
7 pF
1.0 10 dB
80
MHz
hFE Classification
Marking
Rank
hFE
SO
O
70 140
SY
Y
120 240
SR
GR
200 400
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