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| 2SA1145 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) | |||
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Product specification
TO-92MOD Plastic-Encapsulate Transistors
2SA1145 TRANSISTOR (PNP)
TO-92MOD
FEATURES
z Complementary to 2SC2705
z Small Collector Output Capacitance: Cob=2.5pF(Typ.)
z High Transition Frequency: fT=200MHz(Typ.)
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-150
-150
-5
-50
800
150
-55-150
Unit
V
V
V
mA
mW
â
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=-100 μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100 μA, IC=0
ICBO
VCB=-150 V, IE=0
IEBO
VEB=-5 V, IC=0
hFE
VCE=-5 V, IC=-10mA
VCE(sat) IC=-10mA, IB=-1mA
VBE
VCE=-5 V, IC=-10mA
fT
VCE=-5 V, IC=-10mA
Cob
VCB=-10 V, IE=0, f=1 MHz
Min
-150
-150
-5
80
Typ
200
2.5
Max Unit
V
V
V
-0.1 μA
-0.1 μA
240
-1
V
-0.8
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
Y
120-240
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