2SA1036K Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

Product specification
2SA1036K
■ Features
● Large IC. ICMax. = -500mA
● Low VCE(sat). Ideal for low-voltage operation.
SOT-23-3
2.9+0.2
-0.2
0.4+0.1
-0.05
3
1
2
0.95+0.1
-0.1
1.9^+0.2
-0.2
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
P ara me ter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
* PC max. must not be exceeded.
Sy m bol
Rating
Unit
VCB O
-4 0
V
VCE O
-3 2
V
V EB O
-5
V
IC
-0.5
A
PC
0.2
W
Tj
1 50
℃
Ts tg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC = -100 μA
VCEO IC = -1 mA
VEBO IE = -100 μA
ICBO VCB = -20 V
IEBO VEB = -4 V
VCE(sat) IC = -100 mA, IB = -10 mA
hFE VCE = -3 V, IC = -10mA
Cob VCB = -10 V, IE = 0A, f = 1MHz
fT VCE = -5 V, IE = 20 mA, f = 100MHz
Min Typ Max Unit
-40
V
-32
V
-5
V
-1 μA
-1 μA
-0.4 V
82
390
7
pF
200
MHz
■ hFE Classification
Marking
Rank
hFE
HP
P
82～180
HQ
Q
120～270
HR
R
180～390
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