2SA1036 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Product specification
SOT-23 Plastic-Encapsulate Transistors
2SA1036 TRANSISTOR (PNP)
SOT-23
3
FEATURES
∙ Large I_C. _ICMax.= -500 mA
∙ Low V_CE(sat). Ideal for low-voltage operation.
MARKING : HP, HQ, HR
1
2
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-500
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-100μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-100μA,I_C=0
I_CBO
V_CB=-20V,I_E=0
I_EBO
V_EB=-4V,I_C=0
h_FE
V_CE=-3V,I_C=-10mA
V_CE(sat) I_C=-100mA,I_B=-10mA
f_T
V_CE=-5V,I_C=-20mA,f=100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
μA
-1
μA
82
390
-0.4
V
200
MHz
7
pF
CLASSIFICATION OF h_FE
Rank
Range
P
82 - 180
Q
120 - 270
R
180 - 390
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