2SA1034 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Product specification
2SA1034
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-35
V
VCEO
-35
V
VEBO
-5
V
IC
-50
mA
ICP
-100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base-emitter voltage *
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage *
Transition frequency
Noise voltage
* Pulse measurement.
hFE Classification
Marking
hFE
FR
180 360
FS
260 520
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -2 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
VBE VCE = -1 V, IC = -100 mA
ICBO VCB = -10 V, IE = 0
ICEO VCE = -10 V, IB = 0
hFE VCE = -5 V, IC = -2 mA
VCE(sat) IC = -100 mA, IB = -10 mA
fT VCB = -5 V, IE = 2 mA, f = 200 MHz
VCE = -10 V, IC = -1 mA, GV = 80 dB
NV
Rg = 100 kÙ, Function = FLAT
FT
360 700
Min Typ Max Unit
-35
V
-35
V
-5
V
-0.7 -1.0 V
-0.1 ìA
-1 ìA
180
700
-0.6 V
200
MHz
150 mV
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