2PD601A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

Product specification
2PD601A
Features
Low current (max. 100 mA)
Low voltage (max. 50 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current (DC)
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
100
mA
Total power dissipation Tamb 25 ; *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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